digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MFE140 du al gate mosfet fm amplifier maximum ratings rating symbol value unit drain-source voltage v ds 25 vdc gate-source voltage v gs 7.0 vdc drain current i d 30 madc gate current i g 10 madc total device dissipation @ t a = 25c derate above 25c p d 300 mw operating and storage temperature range t j , t stg -65 to 175 c electrical characteristics (t a = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain source breakdown voltage (i d = 10adc, v s = 0, v g1 = -4.0vdc, v g2 = 4.0vdc) v (br)dsx 25 - - vdc gate 1-source breakdown voltage (i g1 = 10adc, v g2s = 0) v (br)g1so 7.0 - 20 vdc gate 2-source breakdown voltage (i g2 = 10adc, v g2s = 0) v (br)g2so 7.0 - 20 vdc gate 1 leakage current (v g1s = 6.0vdc, v g2s = 0, v ds = 0) i g1ss - - 20 nadc gate 2 leakage current (v g2s = 6.0vdc, v g1s = 0, v ds = 0) i g2ss - - 20 nadc gate 1 to source cutoff voltage (v ds = 15vdc, v g2s = 4.0, i d = 200adc) v g1s(off) - - -4.0 vdc gate 2 to source cutoff voltage (v ds = 15vdc, v g1s = 0, i d = 200adc) v g2s(off) - - -4.0 vdc on characteristics zero-gate voltage drain current (v ds = 15vdc, v g2s = 0, v g2s = 4.0vdc) i dss 3.0 10 30 ma small signal characteristics forward transfer admittance (gate 1 connected to drain) (v ds = 15vdc, v g2s = 4.0vdc, i d = 10madc, f = 1.0khz) |y fs | 10 - 20 mmhs input capacitance (v ds = 15vdc, v g2s = 4.0vdc, i d = i dss , f = 1.0mhz) ciss - 4.5 7.0 pf reverse transfer capacitance (v ds = 15vdc, v g2s = 4.0vdc, i d = i dss , f = 1.0mhz) crss - 0.023 0.05 pf output capacitance (v ds = 15vdc, v g2s = 4.0vdc, i d = i dss , f = 1.0mhz) coss - 2.5 4.0 pf functional characteristics noise figure nf - 2.5 3.5 db common source power gain g ps 20 23 - db level of unwanted signal for 1.0% cross modulation - - 45 - mv common-source conversion power gain(gate 1 or gate 2 injection) (signal frequency = 100mhz, local oscillator frequency = 110.7mhz) g c 15 18.5 - db ? if rejection ? i frej - 50 - db sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120706
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MFE140 du al gate mosfet fm amplifier sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120706
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MFE140 du al gate mosfet fm amplifier sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120706
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MFE140 dual gate mosfet fm amplifier sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120706
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 MFE140 dual gate mosfet fm amplifier inches millimeters dim min max min max a - 0.230 - 5.840 b - 0.195 - 4.950 c - 0.210 - 5.330 d - 0.021 - 0.530 e - 0.030 - 0.760 f - 0.019 - 0.480 g 0.100 bsc 2.540 bsc h - 0.046 - 1.170 j - 0.0480 - 1.220 k 0.500 - to-72 12.700 - l 0.250 - 6.350 - m 45c bsc 45c bsc n 0.050 bsc 1.270 bsc p - 0.050 - 1.270 available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120706
|
